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We have succeeded in synthesis of continuous polycrystalline ƒÀ-FeSi2 with large grains on n-type Si(001) substrates using a triple implantation of 56Fe+ ion at room temperature (RT). The RT ion-implantation can induce a large number of defect to the Si surface, so that ƒÀ-FeSi2 growth can be acceleratedby radiation enhanced diffusion of Fe and Si atoms. The synthesised ƒÀ-FeSi2 showed a clear junction withSi(001). We observed its p-type semiconduction and a large hole mobility of 440 cm2/Vs at 280 K. Pronounced photoluminescence at 0.80 eV was observed at 10 K. The heterojunction showed good photovoltaic spectral responses to near band-gap light of 1.55ƒÊm. These suggest that ƒÀ-FeSi2 is one of promising Si-based semiconductors for IR photodetectors. We confirmed that the ion-beam synthesised p-n heterojunction can work sufficiently as an IR photodetector at RT.

Ecologically Friendly Metal-Silicide Semiconductor Reserch. Synthesis of .BETA.-FeSi2/n-Si Heterojunction and Its Photovoltaic Property.