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Iron disilicide thin films were prepared by pulsed laser deposition on Si (100) substrates using an FeSi2 alloytarget. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. Inaddition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400°C and 600°C. This is attributed to the mobility enhancement of Si atoms. At 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both theFe and Si atoms. The films deposited at more than 700°C were grown epitaxially on Si (100) with the relationof β-FeSi2 (041) or (014) II Si (220) at the beginning of deposition. As the film thickness increases, the epitaxialgrowth becomes disordered and finally becomes non-oriented near the film surface. The generation of irondesilicides in PLD method is also discussed.

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Ecologically Friendly Metal-Silicide Semiconductor Reserch. Film Structure of .BETA.-FeSi2 Thin Films Prepared by Pulsed Laser Deposition Using an FeSi2 Alloy Target.