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OH content dependence of the intensity of ArF-excimer-laser induced absorption in fused silica synthesized under reducing conditions was investigated. The absorption spectrum of each silica has a peak at 220 nm, and the intensity of which increases with decreasing OH content. Above the OH content about 1150 ppm, ArF-laser induced absorption was not observed. Annealing in the He ambient, suppressed the creation of a 220 nm band, and no absorption was observed in the samples containing OH of greater than 800 ppm. The annealing in the H2 ambient was not more effective as compared with He. These results indicate that, the fused silica synthesized under reducing conditions and containing OH more than about 1150 ppm was found desirable for excimer laser optics. The fused silica containing OH of more than 800 ppm annealed in the He ambient can also be used as excimer laser optics.

OH Content Dependence of the Intensity of ArF-Excimer-Laser Induced Absorption in Synthetic Fused Silica.