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The very shallow junction of boron has been formed with the combination of ArF excimer laser and BF3 gas. Since BF3 gas is transparent at around 200 nm, boron atoms are obtained by pyrolysis of BF3 gas. Sheet resistance can be controlled by the number of pulses and BF3 pressure under the condition of constant beam energy. From SEM analysis and Wright etching, any damages and defects are not observed on silicon surface at 1.2 J/cm2. Junction depths depend on the number of pulses, and the shallowest junction of -360 A depth is obtained by 5 pulses. From the results of SIMS and four-point probe measurements, it is confirmed that nearly all boron atoms doped are electrically activated up to the concentration of 1020 cm-3. Spatial uniformity within the irradiated area is also confirmed. A diode fabricated by laser doping shows a good I-V characteristics.

Formation of Shallow Junction of Boron Using Excimer Laser