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The mechanism of the reduction in the electron concentration in lightly N-doped n-type 4H-SiC epilayers by 200 keV electron irradiation is investigated. From the temperature dependence of the electron concentration, ) (T n , in the epilayer before and after irradiation with fluences () of 16 10

Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation