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This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. We believe that a better basic understanding of the specific influence of grain boundaries, especially for fine-grain materials such as those making up CdTe-based cells, is now one of the most important issues we must address. We need to clarify the role of grain boundaries in forming the film electronic properties, as well as those of the p-n junction

osti oai (u.s. department of energy office of scientific and technical information)

Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005