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The output fluence and pulse duration of XFELs such as LCLS and TESLA will pose significant challenges to the optical components which may be damaged by the XFEL beam [1]. It is expected that low-atomic-number materials such as SiC, B{sub 4}C, and diamond exhibit weak absorption and therefore are damaged least. It has been suggested that the fundamental damage mechanism that determines the fluence damage threshold for single-shot exposures is thermal melting of the materials [2]. For multiple-shot exposures, the damage threshold is potentially lower than the melt threshold due to fatigue effects associated with mechanical stresses during to thermal cycling [3]

Interaction of VUV-FEL radiation with B4C and SiC at 32nm wavelength