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The objective of this study is to measure the molecular species that lead to the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (..mu..c-Si) photovoltaic (PV) devices from RF discharges. Neutral radicals produce most of the film growth during this PV-device production, and, by implication, radicals primarily determine the device structure and electrical characteristics. The most important feature of the present experiment is thus the measurement of neutral-radical fluxes to the substrate. Additional depositing species that can influence film properties are positive ions and silicon-based particles produced by the discharge; we also measure these positive-ion species here. Some studies have already measured some of these radical and positive-ion species in silane and silane/argon discharges, but not for discharge conditions similar to those used to produce most photovoltaic devices. Our objective is to measure all of these species for conditions typically used for device production. In particular, we have studied 13.6 MHz-excited discharges in pure silane and silane/hydrogen vapors

Measurment of Depositing and Bombarding Species Involved in the Plasma Production of Amorphous Silicon and Silicon/Germanium Solar Cells: Annual Technical Report, 1 June 2002 - 31 May 2005