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Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 10{sup 13} cm{sup -3}) approximately 1 mm thick grown on a heavily doped active layer ({approx} 10{sup 16} cm{sup -3}) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02{sup o} and 10{sup o} from the {l_brace}111{r_brace} toward the {l_brace}100{r_brace}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained {approx}10{sup 15} cm{sup -3} phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to {approx} 10{sup 14} cm{sup -3} but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ({approx}10{sup 16} cm{sup -3}) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ({approx}6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface dropped by an order of magnitude over {approx} 1.5 {micro}m. Layers grown at 550 C did not show significant Sb diffusion. Sn doped In{sub 2}O{sub 3} (ITO) was studied for use in far infrared transparent low temperature contacts for BIB arrays. It was found that {approx}100 nm of ITO deposited on Ge remains electrically conducting at 4 K and is {approx}90% transparent in the far infrared. ITO should be suitable for passivating contacts to Ge BIB arrays.

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors