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This report describes work being performed to provide details of the microstructure in high-quality hydrogenated amorphous silicon and related alloys on the nanometer scale. The materials under study are being prepared by state-of-the-art deposition methods, as well as by new and emerging deposition techniques. The purpose is to establish the role of nanostructural features in controlling opto-electronic and photovoltaic properties. The approach centers around the use of the uncommon technique of small-angle scattering of both X-rays (SAXS) and neutrons (SANS). SAXS has already been established as highly sensitive to microvoids and columnar-like microstructure. A major goal of this research is to establish the sensitivity of SANS to the hydrogen nanostructure. Conventional X-ray diffraction techniques are being used to examine medium-range order and microcrystallinity, particularly near the boundary between amorphous and microcrystalline material

osti oai (u.s. department of energy office of scientific and technical information)

Nanostructure of a-Si:H and related alloys by small-angle scattering of neutrons and X-rays: Annual technical progress report: May 22, 1998 -- May 21, 1999