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Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10/sup 16/ ions/cm/sup 2/ at both room-temperature and 600/sup 0/C. They were isochronally annealed at temperatures ranging from 400/sup 0/C to 900/sup 0/C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs.

Electrical and electron microscopy observations on defects in ion implanted silicon