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The results of a systematic experimental study of minor ity carrier mirrors for &aAs-based solar cells are reported. The experiments utilized ri+/p GaAs diodes fabricated on films grown by molecular beam epitaxy (MBE). Cells were fabri cated (i) with the p-type base layer grown directly on the p+ substrate, (ii) with the base layer grown on a p+ buffer layer, and (iii) with the base layer grown on a p+AlGaAs buffer layer. The dark current-voltage characteristics were analyzed to compare the ability of various minority carrier mirrors to suppress dark current. Results showed that these buffer layers were ineffective as minority carrier mirrors. Also used was a new technique employing illumination and etching which allowed a comparison of the minority carrier reflecting proper ties of two different barriers incorporated into a single solar cell. It was found that heterojunction barriers can be effective if the interface quality is high. In addition, solar cells with AlGaAs buffer layers appeiued to reduce trap concentrations and n=2 dark currents.

Basic studies of III-V high-efficiency cell components: Annual subcontract report, 15 August 1985-14 August 1986