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This report describes continuing studies on electroluminescence (EL), field profile, and hydrogen microstructure by the University of North Carolina, Chapel Hill, during the third year and the extension period. Based on systematic studies of the EL, the authors developed a complete model to explain the unique features of the EL as dispersive-transport-controlled, non-geminate recombinant processes. This model can explain the main features of the EL, not only in hydrogenated amorphous silicon (a-Si:H), but also in other types of trap-rich materials. By employing the forward current and EL temperature-dependence studies, information of both the localized tail states and the deep defect states in real solar-cell structures were obtained concomitantly, which is crucial for the device performance. The authors measured the internal electric field profile in p-i-n and n-i-p cells by a null-current method; they studied the structure of the hydrogen clusters in hot-wire a-Si:H films, both theoretically and experimentally, and show a clear evidence of improved structural order in hot-wire a-Si:H, which is an important factor leading to more stable materials. To link the film microstructure to the metastability, the authors also started the film stress measurements

osti oai (u.s. department of energy office of scientific and technical information)

Experimental study of the factors governing the Staebler-Wronski photodegradation effect in a-Si:H solar cells. Final technical report, July 7, 1994--January 15, 1998