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SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films have received considerable attention for use as non-volatile memory elements. The authors have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, they will present strategies used to optimize the properties of the films including film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under appropriate conditions, {approximately} 1,700 {angstrom} films can be prepared which have a large switchable polarization (2P{sub r} > 10{micro}C/cm{sup 2}), and an operating voltage {le} 2.0 V

Chemical solution deposition of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films for non-volatile memory applications