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Thin film photovoltaic modules based on Cu(In,Ga)Se{sub 2} have been shown to possess attributes that should enable them to compete effectively with silicon-based modules, and that should ultimately allow realization of a much lower $/Wp cost figure. These attributes are stability, high efficiency, and low materials cost. Energy Photovoltaics has explored novel CIGS formation recipes that can be implemented on a unique pilot line constructed to coat substrates 4300 cm{sup 2} in area. One particular feature of this line is the use of proprietary linear sources capable of downwards evaporation. After experimentation with several types of recipe, a so-called {open_quotes}hybrid{close_quotes} process was found to simultaneously yield the desired combination of properties, namely good adhesion, device efficiency, uniformity, and reproducibility. The steps involve precursor formation, compound formation, and termination. Diagnostic techniques used to study and improve the CIGS films included spatial mapping of thickness, composition (using Auger analysis), resistance, V{sub oc} and I{sub sc}. The last three items are determined by quick tests designed to provide rapid feedback on plate quality. Problem areas were broken down and isolated through use of techniques involving substitution of different pieces of equipment for certain processing steps. For example, pilot line precursors were selenized in both the pilot line and smaller scale R&D equipment

CIS photovoltaic technology. Annual technical report, January 12, 1996--January 11, 1997