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The report contains a detailed description of the experimental complexities encountered in developing scanning tunneling microscope (STM) probing of atomic structure on the surface of freshly-grown hydrogenated-amorphous semiconductors. It also contains a speculative microscopic film-growth model that explains differences between the disorder in CVD grown a-Ge:H versus a-Si:H films. This model is derived from prior results obtained in the chemical analysis of GeH{sub 4} plasmas, combined with surface reaction and thermodynamic considerations. The neutral radical fragments of silane, disilane and germane dissociation in discharges, which dominate the vapor and film-growth reactions, have been deduced from detailed analysis of prior data and are reported. 4 refs., 7 figs.

Scanning Tunneling Microscopy Studies of the Surfaces of a-Si:H and a-SiGe:H, Annual Subcontract Report, 1 December 1989 - 31 January 1991