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An interdisciplinary team of five graduate students and four faculty have made considerable progress during Phase I of this program. The objective of this initiative is to develop a high-rate processing sequence to produce device-quality thin films of CI(G)S(Se). A comprehensive CI(G)S(Se) device fabrication capability is being established that includes thermal evaporation and plasma assisted deposition of CI(G)S(Se), rapid thermal processing, DC sputtering of both undoped and doped ZnO, CBD and MOCVD of CdS, and rf sputtering of Mo. Insight into the materials processing issues is being addressed through assessment of the thermochemistry and phase equilibria of the CI(G)S(Se) system, single crystal growth studies, investigation of Na effects on the growth, and detailed materials characterization

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase I annual report, 6 May 1995--5 May 1996