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Using the photomixing technique, the authors systematically studied the transport properties of intrinsic hydrogenated amorphous silicon (a-Si:H) samples that had hydrogen content ranging from over 10% to less than 1% and which were produced by the hot-wire technique at NREL. They investigated the continuous decay of electron drift mobility in intrinsic a-Si:H on light-soaking and determined the degradation of photoconductivity, lifetime, and drift mobility in these a-Si:H samples while light-soaking. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light-soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2--4 for 5-hour light-soaking at 4-sun intensity. The authors investigated the effects of deposition conditions on transport properties of intrinsic a-Si:H films and, by using the photomixing technique, they determined the electron drift mobility, lifetime, and the conduction-band Urbach energy of a-Si:H films as a function of substrate temperature. 44 refs

osti oai (u.s. department of energy office of scientific and technical information)

Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, 15 May 1995--15 May 1996