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This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The original objective of the project was to develop ultrafast radiation detectors based on GaAs epilayers grown by molecular beam epitaxy at 200--300 C. Low temperature (LT) GaAs is known to have subpicosecond carrier lifetimes; therefore, detectors based on this material should have response times of the order of 1 ps, more than an order of magnitude faster than any existing high energy radiation detectors. During the course of the project it became clear that an adequate material structure could not be attained, and therefore the emphasis of the project changed from LT-GaAs to polycrystalline chemical-vapor-deposited (CVD) diamond. This change resulted in demonstrating the feasibility of diamond microstrip detectors for high luminosity colliders for the first time. At the same time, they have advanced the state-of-the-art in diamond film quality

Large dynamic range, picosecond resolution radiation detection based on low-temperature-grown epitaxial GaAs films