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This report describes the progress made in the 3-year program at ASE Americas Inc. in the PVMaT 4A2 Initiative on the development of Edge-Defined Film-Fed Growth (EFG) silicon wafer technology. This program was performed over the period from December 14, 1995 to June 30, 1999. The work focused on advancing EFG manufacturing technology and lowering production costs in three areas: I. EFG Wafers--through better silicon feedstock utilization, improvements in growth, a wafer thickness reduction from 300 to 250 microns, and a higher bulk wafer electronic quality; additionally, new technology for laser cutting of wafers was demonstrated; II. Solar Cells--by an increase in solar cell efficiency, and implementation of a new glass etch process; III. Modules--by lamination cycle improvements, introduction of a new diode housing, and simplification of module construction

Market-Driven EFG Modules Final Report: 14 December 1995--30 June 1999