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Feasibility of synthesizing highly adherent alumina and chromia films on SiC and FeAl substrates using plasma methods was studied. A magnetically filtered, cathodic-arc-produced, metal plasma (Al or Cr) is deposited on the substrate in presence of low pressure oxygen while the substrate is repetitively pulse biased for control of incident ion energy. In the early stages, the ion energy is held in the keV range to produce atomic mixing at the film-substate interface (ion stitching); in the latter stages, the energy is reduced to about 200 eV (IBAD, or ion beam assisted deposition, range) to control the film structure and morphology. Near-stoichiometric films of alumina and chromia were formed on small SiC and FeAl substrates and characterized by RBS, XRD, adhesion, and temperature cycling. The aluminia films were 0.2 to 1.5 {mu} thick, were amorphous prior to heat treatment, and showed an {alpha}-alumina phase after heat treating at 1000 C for up to 16 h. Film substrate adhesion was typically greater than 70 MPa prior to heating, and the thinner films maintained their adhesion even after repetitive cycling in temperature between ambient and 1000 C. It is concluded that the plasma and ion beam techniques developed provide important tools for forming highly adherent and thermally tolerant ceramic films

Feasibility of synthesizing oxide films on ceramic and metal substrates. Final report, August 1994--May 1995