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A performance analysis of single-pole single-throw (SPST) compound microwave switches designed with bulk-type p-i-n diodes of different kinds of semiconductor materials for the Ku and Ka frequency band is presented. The two most common compound switch configurations are p-i n diodes mounted in either series-shunt or series-shunt-series (TEE) designs, and here analyzed using Si, GaAs, GaN-WZ, GaN-ZB, GaSb, InP and SiC semiconductor materials. The methodology used in the calculations to obtain serial resistance and junction capacitance existing in p-i-n diodes is presented in order to calculate the performance parameters proper to each switching device. These parameters are insertion loss and isolation. For the frequency operation of 12 GHz all the Series-Shunt switches, except to the switch based on 6H-SiC p-i-n diode, exhibited insertion losses as low as 0.2 dB and isolation up to 41 dB. The TEE-type p-i-n diode switch based on GaN-ZB has the best insertion loss response as low as 0.23 dB and isolation up to 52 dB on the operating frequencies of 12 GHz and 30 GHz. GaSb p-i-n diode compound switches reaches the best performance at 12 GHz of frequency. The TEE -configuration microwave switches are good for the operating frequency of 30 GHz.

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales