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In order to investigate the possibility to utilize a SiC heat-radiator as a radiant source for infra-re d ray drying, some infra-red units whichconsisted of a rod-like SiC heat-radiator and a alminium reflector were constructed, and their distrebution of radiant density and their unit effecincy were measured. The sizes of thealrninium cylindroiaal surface reflectors prepared for expreiments were as follows.Radius of cylindrical surface or distance between focal lines of the elliptic cylindroid.(mm)Focal length of parabolic cylindroid.(mm)Length of edges of ref lectlector.(rectangle) (mm)A 80 40 450 470B 60 40 350 250C 50 25 350 160D 20 40 350 250In conclusion, comparing the SiC units designed by the auther with a lamp unit as to advantages and disadvantages are as follows.(a) Advantages.1. SiC radiator is firm mechanically and proof against vibration. Moreover its life is fairly long (3000-4000 hours).2. Infra-red ray longer than wave-length 4 μ, which any lamp cannot radiate, is gained abundantly from SiC radiator. Therefore, as glass, water, synthetic resins, paper, clothes, gum, paints except black one and so on well absorb the infa-red ray of longer wave-length, SiC unit is specially effective for the drying ot such samples.3. SiC unit has considerably high radiant efficiency. Specially in the case ot unit D, it is higher than 70% and almost the same as the highest radiant efficiency of a lamp unit 74%.(b) Disadvantages.1. As a SiC radiator is a semi-conductor, its electric resistance increases gradually. So it is very difficult to produce a SiC radiator having a consntant norm.2. In the case SiC unit, a radiator having the temperature about 1000 °C is laid bare. Therefore the drying of some ignitable samples or samples whicih yield ignitable gas by drying, is attended withthe possibility of catching fire.According to those results of my experiments, I believe that it is possible to realize a SiC unit for practical use with the a melioration of both the radiator and the reflector.

ON SOME INFRA-RED DRYING UNITS BY MEANS OF A SiC HEAT-RADIATOR