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Matrix effects in secondary-ion mass spectrometric (SIMS) analysis of light elements (H, Li, Be, B, and F) have been investigated in phenacite, kornerupine, danburite, axinite, spodumene, tourmaline, hambergite, and mica, all of which were epoxy-mounted in a known crystallographic orientation relative to the primary-ion beam. As reference chemical information, we used data from electron microprobe analysis (EMPA) and from single-crystal structure-refinement (SREF) on the same crystals used for SIMS. Quantification of secondary-ion intensities into concentrations was done using Si as the reference matrix element. The results indicate that matrix effects due to crystallographic orientation are &lt;10% relative, or below analytical uncertainty for most analyzed elements. In dioctahedral mica, there is a difference in H/Si ion yield (IY) of ~25% relative when the crystal is analyzed parallel and orthogonal to the main cleavage (which is perpendicular to the c axis). The magnitude of this effect is significant and higher than our SIMS accuracy for H in micas: ±10% relative.

SIMS matrix effects in the analysis of light elements in silicate minerals: Comparison with SREF and EMPA data