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We studied the doping dependence of a nano-gap thermophotovoltaic device that utilises a p-on-n Si photovoltaic cell. The concentration of acceptor dopants, Na in the emitter region was varied from 1023 m−3 to 1025 m−3 while the donor concentration, Nd in the absorber region was varied from 1021 m−3 to 1024 m−3. The combination of Na and Nd that produces the highest conversion efficiency is Na = 1023 m−3 and Nd = 1022 m−3. However, the absorber doping concentration that produces the greatest output power is around 1023 m−3 at all Na values. It is discovered that at higher Na values, the optical response of the device is less sensitive to Nd. It is shown that a decreasing diffusion length does not necessarily jeopardise performance especially when it already exceeds the absorber region thickness. This is due to the positive effects of a decreasing diffusion coefficient.

Effect of Doping Concentration on Conversion Efficiency of Silicon Based Nano-gap Near-field Thermophotovoltaic Cells