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Gallium Arsenide is a potential candidate for optoelectronic devices which can be used in Thin Film Technology with Alq3 as gate insulator. The samples of field effect transistor are fabricated using thermal evaporation method. GaAs epilayers showed (00l) orientation with zinc blende structure and good optoelectronic quality with minimal thermoelastic/lattice mismatch strain. The device parameters have been evaluated from the characteristics. The TFTs exhibited good channel modulation and better stability Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray powder diffraction (XRD) and the temperature dependence were used to characterize the layers.

Fabrication and Evaluation of Thin Film Transistor with Improved Electrical Characteristics