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: This paper describes results on open- and closed-loop controlled growth of epitaxial GaP/Ga(1-x)In(x)P heterostructures on Si(001) substrates. The layers are grown in a low pressure pulsed chemical beam epitaxy (PCBE) reactor utilizing real time optical p-polarized reflectance (PRS) probing. The results of the implemented closed loop controlled growth favorably compare to the films grown using pre-designed source injection profiles based on an experimental data base.

Real-time Optical Control of Ga(1-x)In(x)P Film Growth