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Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to 400°C) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of 350°C showed the best electrical characteristics in terms of the carrier concentration (4.24×10 20 cm -3 ), charge carrier mobility (5.01 cm 2 V -1 S -1 ), and a minimum resistivity (1.24×10 -4 Ω . cm). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to 350°C. However, Band gap energy of MIZO thin film was narrow at substrate temperature of 400°C.

Characteristics of the Mg and In co-doped ZnO Thin Films with Various Substrate Temperatures