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SiC was prepared by heating a mixture of graphite and Si powders with sodium over the temperature range 1173­1273K and was characterized via X-ray diffraction, electron microscopy, and electron diffraction. The sample prepared at 1273K exhibited aggregates of truncated hexagonal pyramid-shaped SiC crystals that were a few hundreds nanometers in size, as evidenced by scanning electron microscopy. Transmission electron microscopy and electron diffraction revealed that the crystals contained stacking faults along [111] of the cubic lattice of ¢-type.

Synthesis of SiC via low-temperature heating of graphite and Si with Na flux