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Epitaxial (KxNa11x)NbO3 films with 3 ̄m in thickness were deposited at 240°C on (100)cSrRuO3//(100)SrTiO3 substrates by hydrothermal method. XRD patterns and Raman spectra were systematically changed with increasing x values. XRD patterns and Raman spectra was not dramatically changed by the annealing treatment at 600°C for 10min under O2 atmosphere. On the other hand, the electrical and piezoelectric properties were improved by this annealing treatment; leakage current density was diminished and longitudinal piezoelectric response was increased to 69 pm/V at x = 0.51.

journal of the ceramic society of japan

Composition dependency of crystal structure, electrical and piezoelectric properties for hydrothermally-synthesized 3 µm-thickness (K&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Na&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;)NbO&lt;sub&gt;3&lt;/sub&gt; films