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Submicron-size SiC ceramics were sintered to densities >97% of the theoretical density by adding 5wt% in situ-synthesized nano-size SiC and 2wt% AlN­RE2O3 (RE = Y, Er). The SiC ceramics showed very low electrical resistivity in an order of 10143·m. This low electrical resistivity was attributed to the smaller amount (2wt%) of sintering additives addition and their microstructural characteristics, i.e., growth of nitrogn-doped SiC grains and the confinment of non-conducting Yand Er-containing phases in the junction areas.

Effect of in situ-synthesized nano-size SiC addition on density and electrical resistivity of liquid-phase sintered silicon carbide ceramics