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The present article reviews recent advances in synthesis of novel phases in the ternary Si-C-N system. A dense carbon nitride phase, C 2 N 2 (NH), was synthesized for the first time at high pressures and high temperatures in a laser heated diamond anvil cell (LH-DAC). Based on results of electron diffraction, EELS- and SIMS-measurements combined with theoretical calculations the structure of this new C-N-H compound was analysed to be a defect wurtzite structure of the sinoite (Si 2 N 2 O)-type. Farther, a variety of amorphous SiCN phases and the first ternary crystalline phases, namely Si(NCN) 2 and Si 2 N 2 (NCN), were synthesized at ambient pressure. In general, the high-pressure polymorphs of Si-C-N materials are predicted to exhibit a unique combination of high hardness, thermal stability and oxidation resistance with interesting optoelectronic properties.

Novel binary and ternary phases in the Si-C-N system