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Electrical resistivity of AIN ceramics was examined with various amounts of Y 2 O 3 within 0 to 4.8 mass%. The electrical resistivity at room temperature varied from 10 16 to 10 10 Ω·cm with different Y 2 O 3 amounts and at sintering temperatures. In the typical samples sintered at 1900°C, a smaller amount of Y 2 O 3 addition with 0.1 to 0.5 mass% gives the lowest electrical resistivity of 10 10 Ω·cm, whereas the higher amount of Y 2 O 3 maintains high resistivity of more than 10 13 Ω·cm. The results derived from different analytical techniques such as impedance analysis, cathodoluminescence spectrum and microstructural analysis explain the importance of the oxygen concentration in the AIN grain for the electrical resistivity of AIN ceramics.

Effects of adding Y2O3 on the electrical resistivity of aluminum nitride ceramics