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Compositionally graded AlN/TiN and SiN/TiN films were prepared on Si substrates at about 700°C by plasma CVD capable of injecting mixed solutions of Ti(OC2H5)4, Al(OC4O7)3, and/or (CH3)3SiOSi(CH3)3 containing stabilizing solution of N(CH2CH2OH)3 into thermal Ar/N2/H2 plasma. A complementary change of Ti and Al, and Si and Ti contents with depth was achieved by changing the feeding rate of each alkoxide solution with time. By this means, it was possible to prepare the CGed AlN//TiN films with the AlN and TiN compositions on the respective surface and substrate, accompanied by complementary changes of Al and Ti with depth, and vice versa. Similarly, the CGed SiNx//TiN and TiN//SiNx films were prepared by this liquid injection CVD method. The films achieved a thickness of 1-3μm and show the formation of cauliflowerlike agglomerated particles consisting of fine 0.2-0.3μm-sized particles on the surface. Columnar and dense microstructure was observed in the deeper region of the CGed AlN//TiN and SiNx//TiN films, respectively. The electrical resistivity of the films changed from 300 to 7×104μΩcm, depending on the type of the CGed films.

nihon seramikkusu kyoukai gakujyutsu rombunshi/nippon seramikkusu kyōkai gakujutsu rombunshi

Special Issue Ceramics Integration. Preparation of Compositionally Graded TiN-AlN and TiN-SiNx Films from Alkoxide Solutions by Liquid Injection Plasma CVD Method.