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Ca2Bi4Ti5O18 (CBTi245) thin films were deposited by spin-coating a precursor solution of metal alkoxides on Pt-passivated Si substrates. Thickness of the as-deposited amorphous layer affected the nucleation site, microstructure and electrical properties. The onset of crystallization of thin films to a pyrochlore phase was below 550°C via rapid thermal annealing in oxygen. A perovskite phase developed by further annealing at temperatures of 650°C or higher. The CBTi245 thin films which were prepared by multi-coating and multicrystallizing of the 20 nm-thick amorphous layer showed random orientation, a columnar-like structure, and P-E hysteresis loops.

Special Issue Ceramics Integration. Integration of Ferroelectric Ca2Bi4Ti5O18 Thin Films on Pt-Passivated Si via Spin-Coating Technique.