English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Polycrystalline silicon thin films were fabricated by VHF (100-144MHz) plasma enhanced chemical vapor deposition. Three different source materials were used to grow the films on glass substrates: (1) SiH2Cl2/H2, (2) SiF4/H2 and (3) SiH4/H2 mixing gases. It was found that the gas mixing ratio where crystal silicon grows strongly depends on the selection of source gas: i.e., crystal growth occurred at mixing ratios (SiF4/H2) smaller than 30/10 sccm while the crystal growth in SiH4/H2 system required much smaller mixing ratios, such as ≤1/50sccm. Microstructures of the films were also strongly influenced by the source material. (220) orientation structures were easily obtained when SiF4, SiH2Cl2 or B2H6 were used, compared to SiH4. In addition, (400) preferentially oriented film grew on glass when the film was grown at a gas mixing ratio of SiF4/H2=30/10sccm and a substrate temperature of 200°C. Chlorinated source gases including SiHnClm (n+m=4) are also expected to produce (400) oriented growth.

Effect of Halogen on the Structure of Low Temperature Polycrystalline Silicon Thin Films Fabricated on Glass Substrates.