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Method to restrict imperfections in silica glass under ion implantation was examined. Silica glasses doped with fluorine or chlorine ions were prepared. Optical absorption bands peaking at 5.14eV and 7.6eV were observed in Xe+-ion-implanted silica. Both intensities decrease with the increase of the fluorine concentration in silica. The absorption bands at 5.14eV and 7.6eV were assigned to Si-Si structure and peroxy radical (POR) or oxygen vacancy (Si-Si bond). The mechanism will be that the displaced fluorine terminates POR and Si-Si structure.

Restriction of Defects Formation under Ion Implantation by Halogen Impurities in Silica Glass