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Diamond-like carbon films have been deposited by hybrid plasma decomposition of CH4 diluted with H2 gas. A hybrid plasma was generated by microwave and RF discharges, and an ion beam was produced by applying do voltage between these two plasmas. The ion beam energy was controllable by adjusting the bias voltage. The property of the films strongly depended on the bias voltage corresponding to ion beam injection energy for deposition. The infrared bands had a main peak at 2955cm-1 and a broad band around 2860cm-1, corresponding to tetrahedral (sp3) bonding structure. The deposition rate was decreased from 50A/min to 25A/min by increasing the bias voltage. The optical gap was measured with a UV-BIS absorption spectrometer for the films deposited on a quartz plate, and estimated to be 2.15-2.45eV; its value declined with increased bias voltage during deposition. The microvickers hardness of the films was increased from 200kg/mm2 to 600kg/mm2 by increasing the bias voltage during deposition. Raman spectra showed two broad peaks at approximately 1300cm-1 and 1600cm-1 at a bias voltage of 100V, identified with the peaks of microcrystalline glass-like carbon.

Synthesis of Diamond-Like Carbon (a-C:H) Films by Hybrid Plasma CVD