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Present investigation was undertaken to get useful technological informations for the suitable designing of the semiconductive glass composite having desired electrical properties. The composite has a microstructure in which semiconductive SnO2 fine particles are dispersed in a glass matrix. The effects of the interaction between the glass and Al2O3 substrate and the sinterability of the glass particles were revealed. When the magnitude of the interaction between the glass and Al2O3 substrate was relatively large, many microcracks occurred in the composite and the electrical conduction path was broken because of the tensile stress parallel to the Al2O3 substrate in the thick film samples. It was supposed that these cracks were generated by the difference of the shrinkage between the matrix glass and Al2O3 substrate. On the other hand, when the sinterability of the glass particles was relatively large, the influence of the Al2O3 substrate on the electrical conduction path was scarcely large because the homogeneous microstructure and good mutual connection were developed during firing. Therefore, it is feasible to produce the thick film resistor having well-controlled electrical properties by the suitable selecton of the glass composition and of the firing condition.

nihon seramikkusu kyoukai gakujyutsu rombunshi/nippon seramikkusu kyōkai gakujutsu rombunshi

The Influence of the Matrix Glass and Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Substrate on the Electrical Conduction Paths in the SnO&lt;sub&gt;2&lt;/sub&gt; Thick Film Resistor System