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In the present time several actual problems of the solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar transistors) are intensively solving [1-6]. To increase the performance of these devices it is attracted an interest determination of materials with higher values of charge carriers mobility [7-10]. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures [3-5, 11]. In this case it is possible to use in homogeneity of heterostructure and necessary optimization of doping of electronic materials [12] and development of epitaxial technology to improve these materials (including analysis of mismatch induced stress) [13-15]. An alternative approaches to increase dimensions of integrated circuits are using of laser and microwave types of annealing [16-18]. Framework the paper we introduce an approach to manufacture field-effect transistors.

international journal of innovative research in electronics and communication

An Approach of Manufacturing of a Voltage References with Increased Density of their Elements. Influence of Miss-Match Induced Stress and Porosity of Materials on Technological Process