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Liquid wastes of dyes can be degraded using catalytic photodegradation techniques using semiconductor material with the help of ultraviolet (UV) exposure. One of the semiconductor materials used for the degradation process is zinc oxide (ZnO). The method of synthesis of thin layer Zn1-xNixO is a solution deposition system. The effect of variations in the amount of nickel ion addition on the synthesis of Zn1-xNixO thin layer on the structure and composition was characterized using X-Ray Diffraction (XRD) and X-Ray Fluorescence (XRF). The performance of the Zn1-xNixO thin layer as photocatalytic was studied through % degradation of liquid waste in this case using Procion Red MX8-B. Based on the results of the characterization, the higher the percentage of Ni 2+ dopant ions, the higher the crystallinity and the smaller the crystal size of the Zn1-xNixO thin layer. Likewise in the photocatalyst activity the higher the percentage of Ni 2 + dopant ions, the higher the degradation percentage. The optimum photocatalyst activity was obtained in thin layers with a composition of 5% Ni which was equal to 34.5%.

Sintesis Lapis Tipis Zn1-XNiXO sebagai Material Fotokatalis Pendegradasi Pewarna Tekstil