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In this paper, we introduce an approach to decrease dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects. E. L. PANKRATOV 16

journal of materials science and engineering with advanced technology

OPTIMIZATION OF MANUFACTURING OF LOGICAL CMOP VOLTAGE DIFFERENCING INVERTING BUFFERED AMPLIFIER MANUFACTURED BY USING FIELD-EFFECT HETEROTRANSISTOR TO DECREASE THEIR DIMENSIONS