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The results of experimental investigation of conductivity of codoped by nitrogen (up to 4.3 atomic %) and by aluminum (2.4 atomic %) n-type ZnO:N:Al films, deposited by radio frequency magnetron sputtering on p-Si substrates, are presented. Using the analysis of temperature dependences of resistivity and of the energy of the Fermi level, the ionization energy and the degree of compensation А. І. Євтушенко, Г. В. Лашкарьов, Л. А. Косяченко, В. М. Склярчук, О. Ф. Склярчук, В. Й. Лазоренко, В. М. Ткач Sensor Electronics and Мicrosystem Technologies 2012 — T. 3(9), No 3 80 81 of impurities (defects) which responsible for the electrical conductivity of the investigated samples is calculated.

THE LEVEL OF SELF-COMPENSATION OF ZnO CODOPED BY NITROGEN AND ALUMINUM