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Charge status of Sand R-centers has been calculated. At the same time an exclusive method of solving the system of equations was created. Modulation of illumination-current characteristics with infrared light has been demonstrated. Sensitization of semiconductors can be observed in that case if in the crystal, which already has effective centers of recombination, enter the same effective traps for carriers of one of the characters, preferably minor. Then, upon photoexcitation, due to the shortage of appropriate media, the rate of recombination is significantly reduced and the photocurrent is increasing. This effect was first theoretically developed in the monograph A. Rose, by example, of cadmium sulfide. With well-chosen parameters, according to calculations of the author, the lifetime of the main carriers could grow up to five orders of magnitude. The concentration of recombination and sensitized centers ~ 1015 cm-3 was used. They are named respectively the 1st and 2nd classes. The magnitude of the capture cross section for electrons and holes was taken to be equal

THE STUDY OF HETEROGENEOUS SENSITIZED CRYSTALS OF CADMIUM SULFIDE. PART I ABOUT CHARGE OF THE CENTERS RECOMBINATION