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1Department of Electronic Engineering, National Kaohsiung Normal University, No. 62, Shenjhong Rd., Yanchao District, Kaohsiung 824, Taiwan 2Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nanzih District, Kaohsiung 811, Taiwan 3National Nano Device Laboratories (NDL), National Applied Research Laboratories, No. 26, Prosperity Road I, Hsinchu Science Park, Hsinchu 300, Taiwan

Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET