English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The article presents the results of measurement and analysis of the fielddependences of the static magnetic susceptibility of thin epitaxial siliconcarbide films grown on the (110) surface of single-crystal silicon by themethod of the coordinated substitution of atoms. In weak magnetic fields, theoccurrence of two quantum effects at room temperature was experimentally found:the hysteresis of the static magnetic susceptibility and, in the fielddependences, quantum Aharonov-Bohm oscillations of the static magneticsusceptibility. The simultaneous occurrence of these effects is a consequenceof two- and one-particle interference of charge carriers (two-dimensionalholes) on microdefects consisting of dipole centers with negative correlationenergy (negative-U dipole centers).

Room-temperature quantum oscillations of static magnetic susceptibility  of silicon-carbide epitaxial layers grown on a silicon substrate by the  method of the coordinated substitution of atoms