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Spin-Torque-Transfer Magnetic Random Access Memory (STT-MRAM) has the potential to become a universal memory due to its superior properties compared with conventional memory technologies. However, the main challenge for implementing STT writing mode in high-density and high-speed memory is the substantial reduction of the intrinsic current density Jc0 required to switch the magnetization of the free layer (FL) while maintaining high thermal stability required for long-term data retention. The intrinsic switching current reduction can be pursued by using materials with low saturation magnetization (Ms), low damping constant (α), high spin polarization (η) and high magnetic anisotropy energy density (Ku) at low dimension. Previous experiments showed that CoFeB incorporated in MgO-based MTJ is one of the most efficient materials for this purpose. In this work chromium was substituted into CoFeB alloys to further reduce their magnetization attributed to the antiferromagnetism of Cr. Films in composition of Cr at 30% showed a reduced magnetization of 300 emu/cm and an enhanced coercive field of 500 Oe, making this material suitable for device application. Moreover, the switching current density Jc0 is predicted to be reduced significantly by using materials with perpendicular magnetic anisotropy (PMA), compared with the normal in-plane ones. Perpendicular Magnetic anisotropy was found in crystalline D022 Mn2.5Ga films with optimal magnetic anisotropy energy of 0.5 ×10 erg/cm 3 , which leads to high thermal stability. A low saturation moment (Ms = 260 emu/cc) was investigated, attributed to the strong antiferromagntic coupling

Growth and Properties of Magnetic Thin Films using Magnetron Sputtering Deposition