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With the technology scaling there is a decrease in transistor size and increase in number of the transistors per a chip. It causes tremendous increase in complexity and the power dissipation of circuits. This paper mainly focuses on reduction of leakage power dissipation in SRAM 9T cells by employing multi threshold self controllable voltage level circuits (LSVL & USVL). The Simulation results show that with the employment of MTSVL technique, leakage power is being reduced compared to the improved SVL technique. The overall simulation is done with CMOS 180nm technology, using the tool of Cadence Virtuoso. Keywords—SRAM, leakage power,MT-SVL, Improved SVL, 180-nm technology.

9T SRAM CELL WITH MT-SVL TECHNIQUE FOR LEAKAGE POWER REDUCTION