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The tin dioxide (SnO2) films doped with bismuth by means of magnetron sputtering of semiconductor two-phase target and powder BiO2 as source of Bi were produced. The effect of bismuth dope concentration variation on the microstructure, electrophysical and gas-sensing properties was investigated. It has been found, that films consist of crystalline rods with diameter of 21±2 nm and length of 120±10 nm. Bismuth doping provided decrease in signal timing drift of acetone sensor in analyzed probe. Sensitivity to acetone vapor of the sample derived from targets with 0.01% bismuth oxide concentration increase almost by 10 times (up to 850) in comparison with undoped film at 300°С. Based on the obtained experimental data the mechanism of bismuth dope influence on electrical and gas-sensing properties of produced tin dioxide films was evaluated. Obtained results have shown capability the use of bismuth doped dioxide tin films for development of saturated acetone vapor sensors.

Synthesis and Characterization of Thin Nanostructured Bismuth Doped Tin Oxide Films and Sensing Studies