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A diffusion kinetic model of the optical emission power degradation of an LED based on a double InGaN/GaN heterostructure during testing under the direct current is presented. Ac-cording to the model, the diffusion of Mg impurity atoms from the p-barrier layer of the heterostructure into the active region is main process causing the LED optical power decrease. The model takes into account the effect of inhomogeneous current distribution due to non-uniform heating of the chip by a high-density current and it can be used to predict the lifetime of an LED when operating in continuous and pulsed modes.

radioèlektronika, nanosistemy, informacionnye tehnologii

Model of degradation of InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of temperature and current density in the heterostructure